**ADRF5044BCCZN-R7: A High-Performance Silicon SPDT Absorptive RF Switch**

The **ADRF5044BCCZN-R7** is a state-of-the-art **silicon-based single-pole double-throw (SPDT) absorptive RF switch**, engineered to deliver exceptional performance across a wide frequency spectrum. Designed for applications demanding high linearity, low insertion loss, and robust power handling, this component stands as a critical solution in modern RF signal chains. Operating from **100 MHz to 44 GHz**, it is ideally suited for 5G infrastructure, test and measurement equipment, satellite communications, and radar systems.

A key feature of the ADRF5044BCCZN-R7 is its **absorptive topology**, which ensures excellent impedance matching in both on and off states. This characteristic significantly reduces reflected power, minimizing VSWR (Voltage Standing Wave Ratio) and enhancing signal integrity across the entire signal path. The switch exhibits an impressively low insertion loss of just **0.8 dB at 10 GHz** and **1.7 dB at 40 GHz**, preserving signal strength even at millimeter-wave frequencies. Furthermore, it boasts high isolation, typically **45 dB at 10 GHz** and **30 dB at 40 GHz**, effectively preventing unwanted signal leakage between ports.

The device is built on a advanced silicon process, offering a compelling alternative to GaAs-based switches by providing **superior power handling capabilities**, with an IP1dB of +39 dBm at 1 GHz. Its high linearity, evidenced by an IP3 of +63 dBm, makes it indispensable in high-performance systems where intermodulation distortion must be minimized. The switch is controlled via a single-pin CMOS/TTL-compatible interface, simplifying integration with digital controllers and FPGAs. Housed in a compact, RoHS-compliant 20-lead LGA package, it is designed for space-constrained applications and offers reliable performance over the -40°C to +105°C ambient temperature range.

**ICGOOODFIND**: The ADRF5044BCCZN-R7 emerges as a premier solution for high-frequency RF systems, masterfully balancing wide bandwidth, minimal insertion loss, high isolation, and exceptional power handling in a compact, easy-to-use form factor.

**Keywords**: RF Switch, Absorptive Switch, High Linearity, Millimeter-Wave, 5G Infrastructure.